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IRF5305PBF P-Chan MOSFET -55V Vdss -31A Id 65mOhm Rds(on) fast switching logic level gate TO-220 package
Features
P-Channel Enhancement Mode – Simplifies high-side switching without requiring a charge pump or level shifter.
-55V Drain-Source Voltage (Vdss) – Suitable for 12V, 24V, and 48V automotive and industrial bus systems.
-31A Continuous Drain Current (Id) – Handles moderate to high current loads safely.
65mΩ Max Rds(on) – Low conduction loss improves efficiency and reduces heat generation.
Logic-Level Gate Drive – Fully enhanced with Vgs = -5V to -10V, compatible with 3.3V/5V microcontrollers.
Fast Switching Speed – Low gate charge (Qg = 63nC typical) minimizes switching losses in PWM applications.
RoHS-Compliant & Lead-Free – "PBF" suffix indicates environmentally friendly, lead-free terminations.
Applications
Reverse Polarity Protection – Protects DC input circuits from accidental battery reversal in automotive and portable devices.
Battery Management Systems (BMS) – High-side disconnect for Li-ion, LiFePO4, and lead-acid battery packs.
Load Switches – Enables/disables power to modules, sensors, or peripheral circuits in embedded systems.
DC Motor Control – Low-frequency PWM speed control for small brushed motors (power tools, pumps, fans).
Power Supply Selection – Switches between primary and backup batteries or AC adapter inputs.
LED Driving – High-side dimming control for automotive lighting, signage, and industrial lamps.
Solar Charge Controllers – Disconnect function for panels or batteries in low-power off-grid systems.
Description
The IRF5305PBF is a P-Channel power MOSFET utilizing advanced HEXFET® technology. Housed in a industry-standard TO-220 package, it is designed for high-efficiency switching applications requiring low on-state resistance and fast switching performance. With a drain-source voltage rating of -55V and continuous drain current of -31A, this device is ideal for load switching, battery protection, and power management circuits where a positive ground or high-side P-channel switch is preferred. The logic-level gate drive simplifies interface with microcontrollers and low-voltage control circuits.
INFORMATION
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category
Discrete semiconductor products
Transistors
FACT,MOSFET
单 DONE,MOSFET
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Vgs(th) for different IDs (maximum)
4V @ 250µA
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manufacturer
Infineon Technologies
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Gate charge (Qg) at different Vgs (max)
63 nC @ 10 V
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series
HEXFET®
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Vgs (max)
±20V
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Packaging
Pipe fittings
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Input Capacitance (CIS) at Different Vds (Max)
1200 pF @ 25 V
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Part status
On sale
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Power Dissipation (Max)
110W(Tc)
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FET type
P channel
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Operating temperature
-55°C ~ 155°C(TJ)
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Technology
MOSFETs (Metal Oxides)
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Mounting type
Through hole
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Drain Source Voltage (Vdss)
55 V
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Vendor device packages
TO-220AB
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Current at 25°C - Continuous Drain (ID)
31A(Tc)
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Package/Enclosure
TO-220-3
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Drive Voltage (Max RDS On, Min RDS ON)
10V
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Base product number
IRF5305
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On-resistance at different IDs and Vgs (max)
60 mOhm @ 16A, 10V
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Drawing
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